xxxinc / scalable-fefet

FeFET Model

Reference

S. Deng et al., "A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation," 2020 IEEE Symposium on VLSI Technology, 2020, pp. 1-2, doi: 10.1109/VLSITechnology18217.2020.9265014.

Parameters

• width = 1u // channel width (cm)
• length = 1u // channel length (cm)
• vfb = 0 // flat band voltage
• tfe = 0.8u // ferroelectric thickness (cm)
• til = 0.1u // interlayer thickness (cm)
• na = 3e17 // substrate doping
• epiv = 8.85e-14 // Vacuum permittivity
• epis = 11.8 // relative permittivity of silicon
• epio = 3.9
• a = 2.3 // gaussian distribution generated for domain electric field
• b = 0.4 // gaussian distribution generated
• p = 0.6775 // not used currently
• q = 0.8115 // not used currently
• Pr = 25 // Polarization C/cm2
• tauo = 1.9e-8 // parameter for switching time, s
• alpha = 3.0 // parameter for switching probability
• beta = 2 // parameter for switching probability
• epife = 28 // relative permittivity of ferroelectric
• miu = 50 // MOSFET surface mobility
• TIMELIMIT = 1e9 // time limit of switching
• ndom = 20 // number of domains
• seed0 = 1 // seed for random number